The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Jun. 19, 2019
Applicant:
Ulvac, Inc., Chigasaki, JP;
Inventors:
Assignee:
ULVAC, INC., Chigasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/786 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); C23C 14/086 (2013.01); C23C 14/3407 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01); H01L 27/1225 (2013.01);
Abstract
[Solving Means] An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor that mainly contains In, Sn, and Ge. An atom ratio of Ge/(In+Sn+Ge) is 0.07 or more and 0.40 or less. As a result, it is possible to achieve transistor characteristics with a mobility of 10 cm/Vs or more.