Junghwan Kim

Title: Innovations of Junghwan Kim

Introduction

Junghwan Kim is a notable inventor based in Meguro-ku, Japan. He has made significant contributions to the field of photoelectronic devices, holding two patents that showcase his innovative work. His inventions reflect a deep understanding of semiconductor technology and its applications.

Latest Patents

Junghwan Kim's latest patents include a photoelectronic device and a flat panel display utilizing the same technology. The photoelectronic device features an active layer composed of inorganic particles and an oxide semiconductor layer that contains zinc (Zn), silicon (Si), and oxygen (O). These layers are stacked to enhance performance. Additionally, the device incorporates a multilayer transparent electrode positioned over or under the active layer, with the oxide semiconductor layer forming part of this electrode. Another patent focuses on an oxide semiconductor compound that includes gallium and oxygen, boasting an optical band gap of 3.4 eV or more. This compound demonstrates an electron Hall mobility of 3 cm/Vs or more when measured at a temperature of 300 K.

Career Highlights

Throughout his career, Junghwan Kim has worked with prestigious institutions, including the Tokyo Institute of Technology and AGC Inc. His work has significantly advanced the understanding and development of photoelectronic technologies.

Collaborations

Junghwan Kim has collaborated with esteemed colleagues such as Hideo Hosono and Hideya Kumomi, contributing to the advancement of innovative technologies in his field.

Conclusion

Junghwan Kim's contributions to the field of photoelectronic devices highlight his expertise and innovative spirit. His patents reflect a commitment to advancing technology and improving the functionality of electronic devices.