The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Dec. 22, 2020
Applicant:
Tokyo Institute of Technology, Tokyo, JP;
Inventors:
Assignee:
TOKYO INSTITUTE OF TECHNOLOGY, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 27/32 (2006.01); H01L 51/44 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5215 (2013.01); H01L 27/3244 (2013.01); H01L 51/442 (2013.01); H01L 51/5072 (2013.01); H01L 51/5092 (2013.01); H01L 51/5234 (2013.01); H01L 51/56 (2013.01); H01L 51/426 (2013.01); H01L 51/502 (2013.01); H01L 2251/305 (2013.01);
Abstract
A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.