Suwon, South Korea

Junghan Lee

This inventor holds 2 USPTO granted patents and 10 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junghan Lee. Retrieved from https://idiyas.com/inventor/junghan-lee-r24z5pqc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Junghan Lee: Semiconductor Patterning Inventor

Introduction

Junghan Lee is an inventor based in Suwon, South Korea. His work includes semiconductor-device manufacturing, and he is associated with Samsung Electronics Ltd. Lee is credited with 2 patents.

Latest Patents

Lee’s listed latest patent is “Method of Forming Composite Mask Patterns of a Semiconductor Device.” It describes a process for creating composite mask patterns on a substrate with two regions. The method forms insulating and mask layers, creates a line-shaped hard-mask pattern with narrow openings, and adds spacers along the openings’ sidewalls. It then removes narrower portions of the hard-mask pattern, leaving a composite pattern made from the spacers and the wider portions. The disclosed approach concerns pattern formation for semiconductor devices.

Career Highlights

Lee’s patent work reflects a focus on semiconductor fabrication techniques. His association with Samsung Electronics Ltd. connects his listed invention to the company’s semiconductor-device activities.

Collaborations

Jisoo Park and Byungju Kang are identified as Lee’s coworkers. The available information does not specify their roles in the patent or whether they collaborated on the invention.

Conclusion

Junghan Lee’s listed patent addresses composite mask-pattern formation, a specialized process in semiconductor manufacturing, and represents part of his recorded inventive work.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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