The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Dec. 08, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jisoo Park, Suwon-si, KR;

Junghan Lee, Suwon-si, KR;

Kwanyoung Chun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10P 50/00 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10W 20/089 (2026.01); H10P 50/73 (2026.01); H10P 76/4085 (2026.01); H10W 20/056 (2026.01); H10W 20/062 (2026.01);
Abstract

A method of forming a pattern of a semiconductor device, the method comprising forming an insulating film on a substrate having a first region and a second region, sequentially forming a lower mask layer and an upper mask layer on the insulating film, forming a line-shaped hard mask pattern having a plurality of narrow openings having the same width in the first region and the second region, respectively, on the upper mask layer, forming line-shaped spacers on sidewalls of the opening of the line-shaped hard mask pattern, forming a composite mask pattern composed of the spacer and a pattern having a first width among the line-shaped hard mask pattern by removing a pattern having a second width among the line-shaped hard mask patterns, the second width being smaller than the first width.


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