Pyeongtaek, South Korea

Jung-Wook Lee

This inventor holds 1 USPTO granted patent. Top assignee: Integrated Process Systems Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-Wook Lee. Retrieved from https://idiyas.com/inventor/jung-wook-lee-iyjpv4ej

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations of Jung-Wook Lee in Thin Film Technology

Introduction

Jung-Wook Lee is a notable inventor based in Pyungtaek-si, South Korea. He has made significant contributions to the field of thin film technology, particularly through his innovative methods of depositing materials.

Latest Patents

Jung-Wook Lee holds a patent for a method of depositing a Ge-Sb-Te thin film. This method involves a thin-film forming step that includes feeding and purging a first precursor, a second precursor, and a third precursor into a chamber where a wafer is mounted. The process results in the formation of the Ge-Sb-Te thin film on the wafer. Additionally, a reaction gas is fed during the feeding of any one of the precursors, enhancing the deposition process.

Career Highlights

Jung-Wook Lee is currently employed at Integrated Process Systems Ltd., where he continues to develop and refine his innovative techniques. His work has positioned him as a key figure in the advancement of thin film technologies.

Collaborations

He collaborates with talented coworkers, including Byung-Chul Cho and Ki-Hoon Lee, who contribute to the innovative environment at Integrated Process Systems Ltd.

Conclusion

Jung-Wook Lee's contributions to thin film technology through his patented methods demonstrate his expertise and commitment to innovation in the field. His work continues to influence advancements in material deposition techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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