The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Aug. 22, 2006
Jung-wook Lee, Pyungtaek-si, KR;
Byung-chul Cho, Pyungtaek-si, KR;
Ki-hoon Lee, Pyungtaek-si, KR;
Tae-wook Seo, Pyungtaek-si, KR;
Jung-Wook Lee, Pyungtaek-si, KR;
Byung-Chul Cho, Pyungtaek-si, KR;
Ki-Hoon Lee, Pyungtaek-si, KR;
Tae-Wook Seo, Pyungtaek-si, KR;
Integrated Process Systems Ltd., Kyungki-do, KR;
Abstract
There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.