Pyeongtaek, South Korea

Byung-Chul Cho

This inventor holds 1 USPTO granted patent. Top assignee: Integrated Process Systems Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Chul Cho. Retrieved from https://idiyas.com/inventor/byung-chul-cho-woc92it0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Byung-Chul Cho: Innovator in Thin Film Technology

Introduction

Byung-Chul Cho is a notable inventor based in Pyungtaek-si, South Korea. He has made significant contributions to the field of thin film technology, particularly through his innovative methods of depositing materials.

Latest Patents

Cho holds a patent for a "Method of depositing Ge-Sb-Te thin film." This patent outlines a process that includes a thin-film forming step, where a Ge-Sb-Te thin film is created on a wafer. The method involves feeding and purging various precursors into a chamber, along with a reaction gas, to facilitate the formation of the thin film.

Career Highlights

Byung-Chul Cho is associated with Integrated Process Systems Ltd., where he applies his expertise in thin film technology. His work has been instrumental in advancing the methods used in the deposition of materials, which are crucial for various applications in electronics and materials science.

Collaborations

Cho has collaborated with notable colleagues, including Jung-Wook Lee and Ki-Hoon Lee. These partnerships have contributed to the development and refinement of innovative processes in their field.

Conclusion

Byung-Chul Cho's contributions to thin film technology through his patent and collaborative efforts highlight his role as an influential inventor in the industry. His work continues to impact advancements in material deposition techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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