Suwon, South Korea

Jung-tak Seo

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-tak Seo. Retrieved from https://idiyas.com/inventor/jung-tak-seo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2014-2015

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2 patents (USPTO):Explore Patents

Title: Jung-tak Seo and Graphene-Layered Structure Innovation.

Introduction

Jung-tak Seo is an inventor based in Suwon, South Korea. His patent work includes a method for directly growing graphene on silicon carbide, with potential applications in transparent electrodes and transistors. The provided information lists 2 patents for Seo.

Latest Patents

Seo’s listed patent, “Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure,” describes a process for forming graphene directly on a silicon carbide (SiC) thin film. The method implants nitrogen ions, oxygen ions, or both into the film’s surface to create an ion-implantation layer. Heat treatment then graphenizes the SiC surface layer above it.

The invention also concerns transparent electrodes and transistors that incorporate the resulting graphene-layered structure. The supplied data repeats this patent description, so it is presented here as one distinct patent.

Career Highlights

Seo is associated with Samsung Electronics Co., Ltd. His listed patent work focuses on graphene fabrication and its potential use in electronic and transparent conductive components.

Collaborations

The provided information names Jae-young Choi and Joung-real Ahn as Seo’s coworkers. It does not specify their roles in the patent or describe particular collaborations.

Conclusion

Jung-tak Seo’s listed innovation centers on directly growing graphene on silicon carbide and applying the resulting structure to transparent electrodes and transistors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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