The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Jan. 28, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Hyeon-jin Shin, Suwon-si, KR;
Jae-young Choi, Suwon-si, KR;
Joung-real Ahn, Suwon-si, KR;
Jung-tak Seo, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); B32B 9/04 (2006.01); H01L 21/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 29/16 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); H01L 29/778 (2006.01); H01M 8/08 (2006.01); H01M 8/10 (2006.01); H01M 4/96 (2006.01); H01M 8/02 (2006.01);
U.S. Cl.
CPC ...
B32B 9/04 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02378 (2013.01); H01L 21/02488 (2013.01); H01L 21/02527 (2013.01); H01L 21/02656 (2013.01); H01L 29/1606 (2013.01); H01L 29/1608 (2013.01); H01L 29/778 (2013.01); H01L 31/022466 (2013.01); H01L 31/1884 (2013.01); H01M 4/96 (2013.01); H01M 8/0234 (2013.01); H01M 8/086 (2013.01); H01M 8/1002 (2013.01); H01M 8/103 (2013.01); H01M 8/1011 (2013.01); H01M 8/1041 (2013.01); Y02E 10/50 (2013.01);
Abstract
A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
Shin, Hyeon-jin. (2015). Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure (U.S. Patent No. 9193133). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9193133
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile