Hwaseong-si, South Korea

Jung-Kun Lim

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Jung-Kun Lim: Innovating Semiconductor Technology in Hwaseong-si, KR

Introduction

Jung-Kun Lim is a prominent inventor located in Hwaseong-si, South Korea. With a focus on semiconductor technology, Lim has contributed significantly to the field with innovative designs and methodologies.

Latest Patents

Lim holds a patent titled "Semiconductor devices including capacitors and methods of manufacturing the same." This patent describes a semiconductor device that consists of a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier. Notably, the second upper electrode is made of a different material than the first upper electrode, showcasing a unique approach to semiconductor device design.

Career Highlights

Currently, Lim is associated with Samsung Electronics Co., Ltd., a leading multinational in technology and electronics. His work at Samsung highlights his commitment to advancing semiconductor technology and improving the efficiency and performance of electronic devices.

Collaborations

Throughout his career, Lim has collaborated with talented colleagues such as Hoon-Sang Choi and Hyeok-Jin Jeong. These collaborations have enhanced the quality of research and development efforts within their projects and have contributed to innovation in the semiconductor field.

Conclusion

In conclusion, Jung-Kun Lim’s contributions to the semiconductor industry are evidenced through his patented innovations and collaborative efforts at Samsung Electronics Co., Ltd. As technology continues to evolve, Lim's work will undoubtedly play a crucial role in shaping the future of semiconductor devices.

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