The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Feb. 21, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hoon-Sang Choi, Seoul, KR;
Hyeok-Jin Jeong, Hwaseong-si, KR;
Jung-Kun Lim, Hwaseong-si, KR;
Young-Mo Tak, Hwaseong-si, KR;
Sung-Kil Han, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 21/0223 (2013.01); H01L 27/10823 (2013.01); H01L 27/10852 (2013.01); H01L 27/10855 (2013.01); H01L 28/75 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01); H01L 21/02255 (2013.01);
Abstract
A semiconductor device includes a substrate, a conductive pattern on the substrate, a lower electrode electrically connected to the conductive pattern, a dielectric layer covering a surface of the lower electrode, a first upper electrode on the dielectric layer, a diffusion barrier on an upper surface of the first upper electrode, and a second upper electrode covering the diffusion barrier, the second upper electrode including a different material from that of the first upper electrode.