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For the Inventor, By the Inventor

Yongin, South Korea

Jung-hyun Sok

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-hyun Sok. Retrieved from https://idiyas.com/inventor/jung-hyun-sok

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal4 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2006

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4 patents (USPTO):Explore Patents
1. 6992923 - Single transistor type magnetic random access memory device and method of operating and manufacturing the same (2006-01-31),
2. 6891241 - Single transistor type magnetic random access memory device and method of operating and manufacturing the same (2005-05-10),
3. 6815783 - Single transistor type magnetic random access memory device and method of operating and manufacturing the same (2004-11-09),
4. 6479848 - Magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices (2002-11-12),

Title: Innovations of Jung-hyun Sok in Memory Device Technology

Introduction

Jung-hyun Sok is a prominent inventor based in Yongin, South Korea. He has made significant contributions to the field of memory device technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and manufacturing processes of memory devices.

Latest Patents

One of his latest patents is for a single transistor type magnetic random access memory device and method of operating and manufacturing the same. This innovative device includes a substrate, first and second doped regions spaced apart from each other, and a gate dielectric layer on a portion of the semiconductor substrate between the doped regions. It features a magnetic tunnel junction on the gate dielectric layer, word lines extending in a specific direction, and bit lines connected to the first doped region in a perpendicular direction. The design of this memory device boasts a simple circuit structure, a prolonged lifetime, and ease of manufacturing.

Career Highlights

Jung-hyun Sok is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that cater to the growing demands of modern electronics.

Collaborations

He has collaborated with notable coworkers, including Dong-Wook Kim and In-kyeong Yoo, contributing to various projects that enhance the capabilities of memory devices.

Conclusion

Jung-hyun Sok's innovative work in memory device technology exemplifies the advancements being made in the field. His contributions are paving the way for more efficient and reliable memory solutions in the electronics industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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