The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Jan. 10, 2001
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices wherein MTJs are arranged at cross points of word lines and read bit lines to form memory cells. After write bit lines and read bit lines are arranged parallel to each other, current bypass paths are formed allowing current to bypass the side and bottom of the MTJ. Thus, an electric field having intensity enough to change the magnetization direction of the MTJ, is applied only to each selected cell. In a write operation, the magnetization direction of a free layer in the MTJ is formed to be parallel or antiparallel to the magnetization direction of a pinned ferromagnetic layer by the current passing through the word line and the current bypass path.