This inventor holds 1 USPTO granted patent. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2024.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2024
Title: Junbeom Seo: Innovator in Semiconductor Technology
Introduction
Junbeom Seo is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and patents. His work focuses on enhancing the performance and efficiency of electronic devices.
Latest Patents
One of Junbeom Seo's notable patents is for a tunneling field effect transistor (TEFT) and a semiconductor device that includes this technology. The TEFT comprises a drain region on a substrate, a channel on the drain region, and a dipole formation layer (DFL) on the channel. Additionally, it features a source region on the DFL, a gate insulation pattern surrounding the channel, and a gate electrode that surrounds the gate insulation pattern. The DFL contacts both the channel and the source region, forming dipoles between them. This innovative design aims to improve the efficiency and functionality of semiconductor devices.
Career Highlights
Junbeom Seo is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to push the boundaries of semiconductor research. His work has garnered attention in the scientific community, contributing to advancements in electronic components.
Collaborations
Some of his notable coworkers include Mincheol Shin and YeongJun Lim. Their collaborative efforts have further enhanced the research and development of semiconductor technologies.
Conclusion
Junbeom Seo's contributions to semiconductor technology, particularly through his patent for the tunneling field effect transistor, highlight his role as an innovator in the field. His work continues to influence advancements in electronic devices and semiconductor efficiency.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
