The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Mar. 22, 2022
Applicant:
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Inventors:
Assignee:
Korea Advanced Institute Of Science And Technology, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7311 (2013.01); H01L 29/7391 (2013.01);
Abstract
A TEFT includes a drain region on a substrate, a channel on the drain region, a dipole formation layer (DFL) on the channel, a dipole formation layer (DFL) on the channel, a source region on the DFL, a gate insulation pattern surrounding the channel, and a gate electrode surrounding the gate insulation pattern. The DFL contacts the channel and the source region and form dipoles between the channel and the source region.
Shin, MinCheol. (2024). Tunneling field effect transistor and semiconductor device including the same (U.S. Patent No. 11990533). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11990533
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile