Gyeonggi-do, South Korea

Jun Phyo Lee


Average Co-Inventor Count = 3.5

ph-index = 1


Company Filing History:


Years Active: 2020-2024

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3 patents (USPTO):Explore Patents

Title: Innovations by Jun Phyo Lee

Introduction

Jun Phyo Lee is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on enhancing the performance and efficiency of memory devices.

Latest Patents

One of his latest patents is titled "Test systems configured to perform test mode operations for multiple memory devices." This invention includes a test device that outputs a command address and a test dock for performing a test mode. The memory device enters the test mode based on the command address, allowing it to set an initial value and perform calculations to generate a row address. The internal data is then compressed and compared, outputting a comparison signal to the test device.

Another significant patent is for a "Semiconductor device with memory banks and sense amplifier arrays." This semiconductor device features multiple memory banks arranged in a specific direction, along with an address decoder and local sense amplifier arrays. The design optimizes the connection between memory banks and sense amplifiers, enhancing overall performance.

Career Highlights

Jun Phyo Lee is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has allowed him to collaborate with other talented professionals in the field, contributing to innovative advancements in memory technology.

Collaborations

Some of his notable coworkers include Hyung Sik Won and Seung Han Oak. Their collaborative efforts have further propelled advancements in semiconductor technology.

Conclusion

Jun Phyo Lee's contributions to the semiconductor industry through his patents and collaborations highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of memory devices, showcasing the importance of innovation in this field.

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