This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020.
Company Filing History:
Years Active: 2020
Title: Jun-Phil Jung: Innovator in Semiconductor Memory Technology
Introduction
Jun-Phil Jung is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of semiconductor memory devices. His innovative work focuses on enhancing the reliability and efficiency of memory technology.
Latest Patents
Jun-Phil Jung holds a patent for a semiconductor memory device that provides analysis and correction of soft data failures in stacked chips. This device includes a first group of dies, which consists of at least one buffer die, and a second group of dies that includes multiple memory dies stacked on the first group. The device conveys data through a plurality of Through-Silicon Vias (TSV) lines. Notably, at least one of the memory dies incorporates a first type Error Correction Code (ECC) circuit that generates transmission parity bits using the data to be transmitted. The buffer die features a second type ECC circuit that corrects transmission errors that may occur during data transmission, utilizing the generated parity bits to produce error-corrected data.
Career Highlights
Jun-Phil Jung is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of semiconductor innovation, contributing to advancements that enhance data integrity in memory devices.
Collaborations
Throughout his career, Jun-Phil has collaborated with talented colleagues, including Donghun Kang and Kyoung-nam Ha. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.
Conclusion
Jun-Phil Jung's contributions to semiconductor memory technology exemplify the importance of innovation in enhancing data reliability. His patent reflects a significant advancement in the field, showcasing his expertise and commitment to improving memory devices.
