The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

May. 02, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Donghun Kang, Yongin-si, KR;

Kyoung-nam Ha, Seoul, KR;

Hyungdong Kim, Suwon-si, KR;

Jun-Phil Jung, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); H01L 23/48 (2006.01); G11C 29/02 (2006.01); G11C 29/52 (2006.01); G11C 29/44 (2006.01); G11C 5/02 (2006.01); G06F 11/10 (2006.01); G11C 11/4093 (2006.01); H01L 25/18 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); G06F 11/1012 (2013.01); G11C 5/025 (2013.01); G11C 29/022 (2013.01); G11C 29/025 (2013.01); G11C 29/4401 (2013.01); G11C 29/52 (2013.01); G11C 11/401 (2013.01); G11C 11/4093 (2013.01); H01L 23/49827 (2013.01); H01L 23/49833 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/0652 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/17181 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01);
Abstract

The semiconductor memory device includes first group dies including at least one buffer die, and second group dies including a plurality of memory dies stacked on the first group dies and conveying data through a plurality of TSV lines. Here, at least one of the plurality of memory dies includes a first type ECC circuit which generates transmission parity bits using transmission data to be transmitted to the first group die, and the buffer die includes a second type ECC circuit which corrects, when a transmission error occurs in the transmission data received through the plurality of TSV lines, the transmission error using the transmission parity bits and generates error-corrected data.


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