Mie, Japan

Jun Nogami


Average Co-Inventor Count = 3.1

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Mle, JP (2018)
  • Mie, JP (2019)

Company Filing History:


Years Active: 2018-2019

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2 patents (USPTO):

Title: Jun Nogami: Innovator in Semiconductor Technology

Introduction

Jun Nogami is a prominent inventor based in Mie, Japan, known for her contributions to semiconductor technology. With a total of 2 patents, she has made significant advancements in the field, particularly while working at Toshiba Memory Corporation.

Latest Patents

Jun Nogami's latest patents include innovative designs for semiconductor devices. One of her patents describes a semiconductor device that features an interconnection layer, a stacked body, and various semiconductor regions. This design enhances the efficiency and functionality of semiconductor devices. Another patent focuses on a semiconductor device and its manufacturing method, which includes a stacked body with multiple electrode layers and interconnects, optimizing the performance of the device.

Career Highlights

Throughout her career, Jun has demonstrated a strong commitment to advancing semiconductor technology. Her work at Toshiba Memory Corporation has positioned her as a key player in the industry, contributing to the development of cutting-edge semiconductor solutions.

Collaborations

Jun Nogami has collaborated with notable colleagues, including Gaku Sudo and Koji Matsuo, to further enhance her research and development efforts in semiconductor technology.

Conclusion

Jun Nogami's innovative work in semiconductor technology continues to impact the industry significantly. Her patents reflect her dedication to advancing technology and improving device performance.

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