The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Aug. 04, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Koji Matsuo, Ama, JP;

Gaku Sudo, Yokkaichi, JP;

Jun Nogami, Mie, JP;

Tatsuro Shinozaki, Yokkaichi, JP;

Takashi Ishida, Yokkaichi, JP;

Jun Fujiki, Mie, JP;

Kenzo Manabe, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/11578 (2017.01); H01L 27/11582 (2017.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7926 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes an interconnection layer, a stacked body, a plurality of separation portions, a semiconductor body, a charge storage portion, an n-type semiconductor region, and a p-type semiconductor region. The n-type semiconductor region is provided between the separation portion and the first interconnection part, and has contact with the first interconnection part and the second semiconductor part. The p-type semiconductor region is provided between the separation portion and the second interconnection part, and has contact with the second interconnection part and the second semiconductor part.


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