Shanghai, China

Jun Luo

This inventor holds 1 USPTO granted patent. Top assignee: Fudan University. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jun Luo. Retrieved from https://idiyas.com/inventor/jun-luo-fcci9b3s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations of Jun Luo in Semiconductor Technology

Introduction

Jun Luo is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to transistors. His work is recognized for its potential to enhance the performance and efficiency of electronic devices.

Latest Patents

Jun Luo holds a patent for a "Schottky junction source/drain transistor and method of making." This invention outlines a method for creating a transistor that involves several steps, including providing a semiconductor substrate, forming a gate stack, and etching layers to ensure optimal performance. The advantages of this invention include the ability to create ultra-thin and uniform Schottky junctions, which are crucial for modern electronic applications.

Career Highlights

Jun Luo is affiliated with Fudan University, where he continues to engage in research and development in semiconductor technology. His academic background and ongoing research contribute to advancements in the field, making him a valuable asset to the university and the broader scientific community.

Collaborations

Jun Luo has collaborated with notable colleagues, including Dongping Wu and Yinghua Piao. These partnerships enhance the research output and innovation potential within their projects.

Conclusion

Jun Luo's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work at Fudan University and collaborations with fellow researchers further solidify his impact on technology and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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