This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1998.
Company Filing History:
Years Active: 1998
Title: Jun-Ker Yeh: Innovator in Transistor Technology
Introduction: Jun-Ker Yeh is a prominent inventor based in Hsin Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor structures. His innovative approach has led to the creation of a unique method for forming a stacked gate electrode structure.
Latest Patents: Jun-Ker Yeh holds a patent for a method of forming undoped/in-situ doped/undoped polysilicon sandwich. This invention provides a method for creating a transistor with a stacked gate electrode structure that includes a lower floating gate and an upper control gate. The floating gate is composed of three polysilicon layers: undoped, doped, and undoped. The process involves forming these layers over a substrate with a tunnel oxide layer, followed by the creation of an intergate dielectric layer and the upper control gate. This innovative design enhances the performance and efficiency of transistors.
Career Highlights: Jun-Ker Yeh is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing transistor technology, which is crucial for modern electronic devices. His patent reflects his expertise and commitment to innovation in this field.
Collaborations: Throughout his career, Jun-Ker Yeh has collaborated with notable colleagues, including Long-Sheng Yeou and Kuo-Sheng Chuang. These partnerships have contributed to the successful development of his patented technologies.
Conclusion: Jun-Ker Yeh's contributions to transistor technology exemplify the spirit of innovation in the semiconductor industry. His patented method for forming advanced transistor structures showcases his expertise and dedication to enhancing electronic device performance.