This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nanjing University. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Innovations of Jun Cheng in Nanjing
Introduction
Jun Cheng is a prominent inventor based in Nanjing, China. He has made significant contributions to the field of electronics, particularly with his innovative work on magnon transistors. His research focuses on the intersection of ferroelectric and magnetic materials, leading to advancements in electronic devices.
Latest Patents
One of Jun Cheng's notable patents is the "Voltage-controlled three-terminal magnon transistor, and control and preparation method thereof." This invention includes a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. When a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal, made of a heavy metal material, converts the magnon into a charge flow. A critical voltage pulse applied between the control terminal and the bottom electrode alters the non-volatile polarization and strain states of the ferroelectric layer, affecting the transmission capability of the magnon based on the magnetoelectric coupling effect. The voltage signal from the detection terminal exhibits a regular loop change behavior with the voltage pulse.
Career Highlights
Jun Cheng is affiliated with Nanjing University, where he continues to push the boundaries of research in his field. His work has garnered attention for its potential applications in next-generation electronic devices.
Collaborations
He collaborates with esteemed colleagues, including Haifeng Ding and Bingfeng Miao, contributing to a dynamic research environment that fosters innovation.
Conclusion
Jun Cheng's contributions to the field of electronics, particularly through his patented magnon transistor technology, highlight his role as a leading inventor in Nanjing. His work promises to influence future advancements in electronic materials and devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
