The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Nov. 07, 2023
Applicant:

Nanjing University, Nanjing, CN;

Inventors:

Haifeng Ding, Nanjing, CN;

Bingfeng Miao, Nanjing, CN;

Jun Cheng, Nanjing, CN;

Rui Yu, Nanjing, CN;

Liang Sun, Nanjing, CN;

Assignee:

Nanjing University, Nanjing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/20 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/20 (2023.02); H10N 50/85 (2023.02);
Abstract

A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal is made of a heavy metal material, which can convert the magnon in the magnetic layer into a charge flow. When a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, non-volatile polarization and non-volatile strain states of the ferroelectric layer change, which in turn affects a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. In addition, a voltage signal of the detection terminal exhibits a regular loop change behavior with a change of the voltage pulse.


Find Patent Forward Citations

Ding, Haifeng. (2025). Voltage-controlled three-terminal magnon transistor, and control and preparation method thereof (U.S. Patent No. 12324357). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12324357

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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