This inventor holds 2 USPTO granted patents. Top assignees: Nanjing University, Uchicago Argonne, LLC. Active years: 2008-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2008-2025
Title: Haifeng Ding: Innovator in Magnon Transistors and Scanning Tunneling Microscopy
Introduction
Haifeng Ding is a prominent inventor based in Nanjing, China. He has made significant contributions to the fields of electronics and microscopy, holding a total of 2 patents. His innovative work focuses on advanced technologies that enhance the functionality and efficiency of electronic devices.
Latest Patents
Ding's latest patents include the development of a voltage-controlled three-terminal magnon transistor. This device features a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. When a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal, made of a heavy metal material, converts the magnon into a charge flow. The device's performance is influenced by a voltage pulse applied between the control terminal and the bottom electrode, which alters the polarization and strain states of the ferroelectric layer, thereby affecting the transmission capability of the magnon.
Another notable patent is the integrated electron beam tip and sample heating device for a scanning tunneling microscope (STM). This device can heat a sample and tip to temperatures up to 2200 K. It includes a base stage that mates with both an electron beam sample heating carrier and an electron beam tip heating carrier, each containing a filament. The design allows for filament exchange without venting the vacuum system, ensuring reproducible temperature control and facilitating sample preparation processes.
Career Highlights
Haifeng Ding has worked with notable organizations such as Uchicago Argonne, LLC and Nanjing University. His experience in these institutions has contributed to his expertise in the development of cutting-edge technologies.
Collaborations
Ding has collaborated with esteemed colleagues, including Dongqi Li and John E. Pearson. These partnerships have fostered a collaborative environment that enhances innovation and research in their respective fields.
Conclusion
Haifeng Ding is a distinguished inventor whose work in magnon transistors and scanning tunneling microscopy has made a significant impact on technology. His innovative patents and collaborations reflect his commitment to advancing scientific knowledge and practical applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
