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For the Inventor, By the Inventor

Yokohama, Japan

Jumpei Kumagai

This inventor holds 12 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1990-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jumpei Kumagai. Retrieved from https://idiyas.com/inventor/jumpei-kumagai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 10

Forward Citations = 202(Granted Patents)


Company Filing History:

goldMedal12 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1990-1996

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12 patents (USPTO):Explore Patents
1. 5561308 - Semiconductor device including thin film transistor (1996-10-01),
2. 5430313 - Transistor with an offset gate structure (1995-07-04),
3. 5324975 - Semiconductor memory device (1994-06-28),
4. 5321300 - Laser-broken fuse (1994-06-14),
5. 5302845 - Transistor with an offset gate structure (1994-04-12),
6. 5276343 - Semiconductor memory device having a bit line constituted by a (1994-01-04),
7. 5194752 - Semiconductor memory device (1993-03-16),
8. 5041887 - Semiconductor memory device (1991-08-20),
9. 5016071 - Dynamic memory device (1991-05-14),
10. 5013679 - Cell capacitor of a dynamic random access memory and a method of (1991-05-07),
11. 4950617 - Method of manufacturing semiconductor device (1990-08-21),
12. 4941031 - Dynamic memory device with improved wiring layer layout (1990-07-10),

Title: Jumpei Kumagai: Innovator in Semiconductor Technology

Introduction

Jumpei Kumagai is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on advancing the functionality and efficiency of semiconductor devices.

Latest Patents

Kumagai's latest patents include a semiconductor device featuring a thin film transistor. This innovative device comprises a semiconductor substrate of a first conductivity type, with a first insulation film formed on it. A gate electrode and a second insulation film are sequentially placed on the first insulation film. A trench extends through these layers to the semiconductor substrate, where a cylindrical gate insulation film is formed on the exposed surface of the gate electrode. Additionally, a capacitor insulation film is created on the surface of the semiconductor substrate within the trench. A cylindrical conductive film is also formed, which includes regions doped with impurities of both the first and second conductivity types. Another notable patent involves a transistor with an offset gate structure, which features n-type source/drain diffused layers on a p-type silicon substrate. This design enhances the performance of the transistor by utilizing a gate insulating film made of silicon oxide, isolated from the diffused layers.

Career Highlights

Kumagai is currently employed at Kabushiki Kaisha Toshiba, where he continues to innovate in semiconductor technology. His work has been instrumental in developing advanced semiconductor devices that are crucial for modern electronics.

Collaborations

Some of his notable coworkers include Shizuo Sawada and Syuso Fujii, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Jumpei Kumagai's contributions to semiconductor technology through his patents and work at Toshiba highlight his role as a leading inventor in this critical industry. His innovations continue to shape the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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