The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1990
Filed:
Jan. 12, 1989
Jumpei Kumagai, Yokohama, JP;
Satoshi Shinozaki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
This invention discloses a semiconductor integrated circuit in which an input protecting circuit and an inner circuit are formed on a single semiconductor substrate and a MOS transistor of the inner circuit is formed by mask-alignment. The source and drain regions of the MOS transistor of the input protecting circuit are formed by self-alignment, so that the impurity concentration of the source and drain regions is increased and the diffusion resistance thereof is reduced, thereby increasing the junction breakdown power caused by a drain current. In addition, the radii of curvature of the junction curved surface portions of the source and drain regions of the MOS transistor of the input protecting circuit are increased so as to reduce the electric field intensity at the junction curved surface portions, thereby improving the junction breakdown withstand characteristics.