Munich, Germany

Julie Mathilde Suzanne Paye

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Infineon Technologies Austria Ag. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Julie Mathilde Suzanne Paye. Retrieved from https://idiyas.com/inventor/julie-mathilde-suzanne-paye

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Julie Mathilde Suzanne Paye: Innovator in Semiconductor Technology

Introduction

Julie Mathilde Suzanne Paye is a prominent inventor based in Munich, Germany. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique semiconductor device that enhances electronic components.

Latest Patents

Julie holds 1 patent for her invention titled "Semiconductor device, electronic component and method." This patent describes a semiconductor device that includes a galvanically isolated signal transfer coupler with a contact pad. The contact pad is designed with a metallic base layer, a metallic diffusion barrier layer, and a metallic wire bondable layer. The design features a first portion with a curved surface at the periphery, enhancing its functionality.

Career Highlights

Julie is currently employed at Infineon Technologies Austria AG, where she continues to push the boundaries of semiconductor innovation. Her work is characterized by a commitment to advancing technology and improving electronic components.

Collaborations

Throughout her career, Julie has collaborated with notable colleagues, including Matthias Stecher and Martin Kotzbauer. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Julie Mathilde Suzanne Paye is a trailblazer in the semiconductor industry, with her innovative patent showcasing her expertise and dedication. Her contributions continue to influence the field and inspire future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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