The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Dec. 11, 2017
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Matthias Stecher, Munich, DE;

Martin Kotzbauer, Regenstauf, DE;

Julie Mathilde Suzanne Paye, Munich, DE;

Andreas Zankl, Wiesent, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H04L 25/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49894 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/49822 (2013.01); H01L 23/5222 (2013.01); H01L 23/5227 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/039 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/03848 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/48655 (2013.01); H01L 2224/48664 (2013.01); H01L 2224/48744 (2013.01); H01L 2224/48755 (2013.01); H01L 2224/48764 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/48855 (2013.01); H01L 2224/48864 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/85375 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/181 (2013.01); H04L 25/0266 (2013.01);
Abstract

In an embodiment, a semiconductor device includes a galvanically isolated signal transfer coupler having a contact pad. The contact pad includes a metallic base layer, a metallic diffusion barrier layer arranged on the metallic base layer, and a metallic wire bondable layer arranged on the metallic diffusion barrier layer. The metallic diffusion barrier layer includes a first portion and a second portion. The first portion has a first surface and a second surface opposing the first surface. The first surface has a curved surface at the periphery. The first portion extends in a transverse plane and has a width. The second portion protrudes from the second surface intermediate the width of the first portion.


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