Taichung, Taiwan

Jui-Yang Wu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jui-Yang Wu: Innovator in Semiconductor Technology

Introduction

Jui-Yang Wu is a talented inventor based in Taichung, Taiwan. She has made significant contributions to the field of semiconductor technology. Although she currently holds no granted patents, her innovative ideas are reflected in her latest patent applications.

Latest Patent Applications

One of her notable patent applications is titled "AREA-SELECTIVE REMOVAL AND SELECTIVE METAL CAP." This application discloses a semiconductor device and a semiconductor fabrication method. The semiconductor device includes a gate structure over a semiconductor substrate, which features a high-k dielectric layer, a p-type work function layer, an n-type work function layer, a dielectric anti-reaction layer, and a glue layer. Additionally, a continuous metal cap is formed over the gate structure by depositing metal material, selectively removing a portion of the anti-reaction layer, and depositing additional metal material. The fabrication method involves several steps, including receiving a gate structure, flattening the top layer, precleaning and pretreating the surface, and selectively removing a portion of the anti-reaction layer to create a continuous metal cap.

Conclusion

Jui-Yang Wu's work in semiconductor technology showcases her innovative spirit and dedication to advancing the field. Her latest patent applications reflect her potential to contribute significantly to future developments in this area.

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