Hsinchu, Taiwan

Jui-Fen Fan

This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2009.


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Jui-Fen Fan: Innovator in Organic Non-Volatile Memory Technology

Introduction

Jui-Fen Fan is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly through his innovative work on organic non-volatile memory materials.

Latest Patents

Jui-Fen Fan holds a patent for an organic non-volatile memory material and memory device utilizing the same. This invention discloses an organic non-volatile memory (ONVM) material that includes nanoparticles evenly dispersed in a first polymer. The nanoparticles feature a metal core covered by a second polymer, forming a core/shell structure. The first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material boasts high uniformity, which stabilizes the electric properties of the memory device. This includes increasing rewrite counts, enhancing data retention time, reducing driving voltage, lowering write current, and improving the current on/off ratio.

Career Highlights

Jui-Fen Fan is associated with the Industrial Technology Research Institute, where he has been instrumental in advancing research in memory technologies. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Jui-Fen Fan collaborates with talented individuals such as Jun-Rong Chen and Ching Ting, who contribute to the innovative environment at the Industrial Technology Research Institute.

Conclusion

Jui-Fen Fan's contributions to organic non-volatile memory technology highlight his role as a leading inventor in the field. His innovative patent demonstrates the potential for advancements in memory devices, paving the way for future developments.

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