The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Oct. 24, 2007
Jun-rong Chen, Taoyuan County, TW;
Heng-tien Lin, Taoyuan County, TW;
Jui-fen Fan, Hsinchu County, TW;
Gue-wuu Hwang, Kaohsiung, TW;
Ching Ting, Hsinchu, TW;
Yi-jen Chan, Taoyuan County, TW;
Jun-Rong Chen, Taoyuan County, TW;
Heng-Tien Lin, Taoyuan County, TW;
Jui-Fen Fan, Hsinchu County, TW;
Gue-Wuu Hwang, Kaohsiung, TW;
Ching Ting, Hsinchu, TW;
Yi-Jen Chan, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.