Los Gatos, CA, United States of America

Judy Hsiu-Chih Huang

This inventor holds 1 USPTO granted patent. Top assignee: Novellus Systems Incorporated. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Judy Hsiu-Chih Huang. Retrieved from https://idiyas.com/inventor/judy-hsiu-chih-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Innovations of Judy Hsiu-Chih Huang

Introduction

Judy Hsiu-Chih Huang is an accomplished inventor based in Los Gatos, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of hermetic silicon carbide materials.

Latest Patents

Judy holds a patent for "Hermetic silicon carbide." This innovation involves the deposition of hermetic amorphous doped silicon carbide on an integrated circuit substrate using a Plasma-Enhanced Chemical Vapor Deposition (PECVD) reactor. The process includes nitrogen-doping of the silicon carbide film by introducing nitrogen-containing molecules, such as nitrogen or ammonia gas, into the reactor chamber along with an organosilane, preferably tetramethylsilane, to form a plasma. Additionally, oxygen-doping is achieved by flowing oxygen-containing molecules into the reaction chamber.

Career Highlights

Judy Hsiu-Chih Huang is associated with Novellus Systems Incorporated, a company known for its advanced semiconductor manufacturing equipment. His work has contributed to the enhancement of integrated circuit performance and reliability.

Collaborations

Some of his notable coworkers include Haiying Fu and Ka Shun Wong, who have collaborated with him on various projects within the semiconductor industry.

Conclusion

Judy Hsiu-Chih Huang's innovative work in hermetic silicon carbide technology showcases his expertise and commitment to advancing semiconductor materials. His contributions continue to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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