Novellus Systems Incorporated

Judy Hsiu-Chih Huang

Bart Jan Van Schravendijk

Haiying Fu

Xingyuan Tang

Ka Shun Wong

Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.

Growing community of inventors

Los Gatos, CA, United States of America

Judy Hsiu-Chih Huang