Plano, TX, United States of America

Juan A Rosal


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Juan A Rosal: Innovator in Semiconductor Technology

Introduction

Juan A Rosal is a notable inventor based in Plano, TX (US), recognized for his contributions to semiconductor technology. With a focus on enhancing the reliability of memory cells, he has made significant strides in the field of static random access memory (SRAM).

Latest Patents

Juan A Rosal holds a patent for a method to identify or screen VMIN drift on memory cells during burn-in or operation. This innovative method involves providing an electrical connection to a well of a MOS transistor within an SRAM cell. By applying a predetermined voltage to the well, the threshold voltage of the transistor can be altered, allowing for the identification of reliability characteristics of the semiconductor device. This advancement plays a crucial role in improving the manufacturing process of semiconductor devices.

Career Highlights

Currently, Juan A Rosal is employed at Texas Instruments Corporation, where he continues to develop and refine technologies that impact the semiconductor industry. His work is instrumental in ensuring the reliability and efficiency of memory cells, which are vital components in modern electronic devices.

Collaborations

Throughout his career, Juan has collaborated with esteemed colleagues, including Michael Allen Ball and Jayesh C Raval. These partnerships have fostered an environment of innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Juan A Rosal's contributions to the field of semiconductor technology, particularly in SRAM reliability, highlight his role as an influential inventor. His patent and ongoing work at Texas Instruments Corporation underscore the importance of innovation in enhancing electronic device performance.

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