This inventor holds 1 USPTO granted patent and 8 published patent applications. Top assignee: Samsung Corning Precision Materials Co., Ltd.. Active years: 2012.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2012
Title: Ju Heon Lee: Innovator in GaN Single Crystal Substrates
Introduction
Ju Heon Lee is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of gallium nitride (GaN) single crystal substrates. His innovative work has led to advancements that are crucial for various applications in electronics and optoelectronics.
Latest Patents
Ju Heon Lee holds a patent for a GaN single crystal substrate and a method for processing the surface of this substrate. The patent outlines a process that includes steps for planarizing both the top and bottom sides of a gallium nitride original substrate. The method involves radiating light with wavelengths ranging from 370 to 800 nanometers onto the planarized substrate, measuring its transmittance, and confirming that it falls within the range of 65 to 90%. The resulting gallium nitride single crystal substrate exhibits high transmittance, which is essential for its performance in various applications. The thickness ratio of the damage layers on both sides of the substrate is maintained within the range of 0.99 to 1.01.
Career Highlights
Ju Heon Lee is currently employed at Samsung Corning Precision Materials Co., Ltd., where he continues to push the boundaries of innovation in materials science. His work has not only contributed to the advancement of GaN substrates but has also positioned him as a key figure in the industry.
Collaborations
Throughout his career, Ju Heon Lee has collaborated with notable colleagues, including Jin Suk Jeong and Ki Soo Lee. These collaborations have fostered an environment of innovation and have led to significant advancements in their respective fields.
Conclusion
Ju Heon Lee's contributions to the development of GaN single crystal substrates highlight his role as an influential inventor in the field of materials science. His innovative methods and collaborative efforts continue to pave the way for advancements in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile