The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Oct. 29, 2007
Jin Suk Jeong, Suwon-si, KR;
Ki Soo Lee, Suwon-si, KR;
Kyoung Jun Kim, Suwon-si, KR;
Ju Heon Lee, Suwon-si, KR;
Chang Uk Jin, Suwon-si, KR;
Jin Suk Jeong, Suwon-si, KR;
Ki Soo Lee, Suwon-si, KR;
Kyoung Jun Kim, Suwon-si, KR;
Ju Heon Lee, Suwon-si, KR;
Chang Uk Jin, Suwon-si, KR;
Abstract
The surface of a gallium nitride single crystal substrate is processed, e.g., comprising steps by planarizing the top side and the bottom side of a gallium nitride original substrate positioned on a support bed; radiating light having wavelengths ranging from 370 to 800 nanometers (nm) onto the planarized gallium nitride original substrate; measuring transmittance of the gallium nitride original substrate; and confirming whether the transmittance is within the range of 65 to 90%. A gallium nitride single crystal substrate obtained through the method of processing the surface has high transmittance ranging from 65 to 90% measured using light having wavelengths of 370 to 800 nm. The thickness ratio (DL/DL) of the damage layers on the both sides of the gallium nitride single crystal substrate can be obtained within the range of 0.99 to 1.01.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile