Chang Uk Jin

Title: Chang Uk Jin: Innovator in GaN Single Crystal Substrates

Introduction

Chang Uk Jin is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of materials science, particularly in the development of gallium nitride (GaN) single crystal substrates. His innovative work has implications for various applications in electronics and optoelectronics.

Latest Patents

Chang Uk Jin holds a patent for a GaN single crystal substrate and a method for processing the surface of this substrate. The patent details a process that includes steps for planarizing both the top and bottom sides of a gallium nitride original substrate positioned on a support bed. The method involves radiating light with wavelengths ranging from 370 to 800 nanometers onto the planarized substrate, measuring its transmittance, and confirming that it falls within the range of 65 to 90%. The resulting gallium nitride single crystal substrate exhibits high transmittance, which is crucial for its effectiveness in various applications. The thickness ratio of the damage layers on both sides of the substrate can be maintained within the range of 0.99 to 1.01, ensuring optimal performance.

Career Highlights

Chang Uk Jin is currently employed at Samsung Corning Precision Materials Co., Ltd., where he continues to advance his research and development efforts. His work at this leading company has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Ki Soo Lee and Jin Suk Jeong. Their collaborative efforts contribute to the innovative environment at Samsung Corning Precision Materials Co., Ltd.

Conclusion

Chang Uk Jin's contributions to the field of GaN single crystal substrates highlight his role as a key innovator in materials science. His patented methods and ongoing work at Samsung Corning Precision Materials Co., Ltd. continue to push the boundaries of technology in this important area.