Anyang-shi, South Korea

Ju-Cheon Yeo


Average Co-Inventor Count = 1.4

ph-index = 7

Forward Citations = 197(Granted Patents)


Location History:

  • Kyungki-do, KR (1998 - 1999)
  • Anyang, KR (1999)
  • Kyongki-do, KR (2000)
  • Seoul, KR (2000 - 2002)
  • Kyeonggi-do, KR (2002)
  • Anyang-shi, KR (2003 - 2006)

Company Filing History:


Years Active: 1998-2006

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13 patents (USPTO):Explore Patents

Title: The Innovations of Ju-Cheon Yeo

Introduction

Ju-Cheon Yeo is a prominent inventor based in Anyang-shi, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin film transistors. With a total of 13 patents to his name, Yeo's work has had a substantial impact on the industry.

Latest Patents

Among his latest patents is a method for fabricating thin film transistors that exhibit low OFF state leakage current. This innovation reduces the OFF state leakage current by utilizing doping implantation energies that ensure the average penetration depth of the doping impurity is located below the surface of the semiconductor layer. This method results in a relatively small concentration of impurities remaining at the surface, enhancing the performance of the transistors.

Career Highlights

Ju-Cheon Yeo has worked with notable companies such as LG Electronics Inc. and LG Philips LCD Co., Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.

Collaborations

Throughout his career, Yeo has collaborated with several talented individuals, including Sang-Gul Lee and Yong-Min Ha. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Ju-Cheon Yeo's contributions to the field of thin film transistors and his extensive patent portfolio highlight his role as a leading inventor in semiconductor technology. His innovations continue to influence the industry and pave the way for future advancements.

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