The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Oct. 30, 2000
Applicant:
Inventors:
Joon-Young Yang, Seoul, KR;
Ju-Cheon Yeo, Anyang-shi, KR;
Assignee:
LG.Philips LCD Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/184 ;
Abstract
Thin film transistors and methods of fabricating thin film transistors having low OFF state leakage current. The OFF state leakage current reduction is achieved by using doping implantation energies such that the average penetration depth of the doping impurity into the semiconductor, the projected range Rp, is located below the surface of the semiconductor layer, and such that the concentration of impurities remaining at the surface of the semiconductor layer is relatively small.
Yang, Joon-Young. (2003). Thin film transistor and fabricating method thereof (U.S. Patent No. 6596568). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6596568
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile