Joseph T Evans, Jr

Title: **Joseph T. Evans, Jr.: A Pioneer in Ferroelectric Memory Technology**

Introduction

Joseph T. Evans, Jr., based in Albuquerque, NM, is a distinguished inventor renowned for his significant contributions to the field of memory technology. With an impressive portfolio of 57 patents, Evans has been at the forefront of innovations that enhance data storage and retrieval processes.

Latest Patents

Among his latest groundbreaking inventions are two notable patents related to CMOS analog memories utilizing ferroelectric capacitors. The first patent introduces a memory cell design that includes a ferroelectric capacitor, a charge source, and a read circuit. This memory cell allows for storing data values with more than three distinct possible states. The intricacy of the invention lies in the charge source converting the data value into a remanent charge, which is then effectively stored and read from the ferroelectric capacitor.

His second patent, titled "Analog Ferroelectric Memory with Improved Temperature Range," focuses on an advanced ferroelectric memory cell characterized by a maximum remanent charge. This innovation involves a write circuit that can handle data values with more than two states efficiently, determining the fraction of the maximum charge to be stored. The read circuit is adept at measuring the stored charge, enabling accurate data retrieval.

Career Highlights

Joseph T. Evans, Jr. has held influential roles in several prestigious companies, most notably at Radiant Technologies, Inc. and National Semiconductor Corporation. His work in these organizations has played a critical role in advancing ferroelectric memory technologies, cementing his status as a leading inventor in the field.

Collaborations

Throughout his career, Evans has collaborated with distinguished professionals, including Jeff A. Bullington and Richard Hiram Womack. These partnerships have undoubtedly enriched his innovations, combining their expertise to propel advancements in memory technology further.

Conclusion

Joseph T. Evans, Jr. continues to exemplify the spirit of innovation in the technology sector. His pioneering work in ferroelectric memory not only advances the capabilities of modern memory systems but also serves as an inspiration for future inventors. With a legacy marked by numerous patents and significant contributions to the industry, Evans remains a pivotal figure in the world of technological advancements.