Location History:
- Milpitas, CA (US) (2017)
- Colorado Springs, CO (US) (2017 - 2019)
Company Filing History:
Years Active: 2017-2019
Title: Joseph S. Tandingan: Innovator in Memory Technology
Introduction
Joseph S. Tandingan is a notable inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of memory technology, holding a total of 5 patents. His work focuses on advancing memory devices, particularly in the realm of ferro-electric random access memory.
Latest Patents
One of Tandingan's latest patents is the 2T1C ferro-electric random access memory cell. This innovative memory device includes an array of Ferro-electric Random Access Memory cells. Each cell is designed with a first transistor coupled between a bit-line and a storage node (SN), controlled by a first wordline (WL). Additionally, a second transistor is coupled between a reference line and the SN, controlled by a second wordline (WL). The design also incorporates a ferro-capacitor connected between the SN and a plateline. The device features a sense-amplifier linked to the bit-line and reference line, along with a processing element that issues control signals to the wordlines, plateline, and sense-amplifier. The cell operates to generate a bit-level reference, applying a first voltage pulse to the plateline during a read cycle for the data pulse, while a second voltage pulse serves as both a reference pulse and a clear pulse.
Career Highlights
Joseph S. Tandingan is currently employed at Cypress Semiconductor Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that enhance performance and efficiency.
Collaborations
Some of Tandingan's notable coworkers include Jayant Ashokkumar and Jesse J. Siman. Their collaborative efforts contribute to the innovative environment at Cypress Semiconductor Corporation.
Conclusion
Joseph S. Tandingan is a prominent figure in the field of memory technology, with a focus on developing advanced memory devices. His contributions, particularly in ferro-electric random access memory, showcase his commitment to innovation and excellence in engineering.