The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Mar. 24, 2016
Cypress Semiconductor Corporation, San Jose, CA (US);
Joseph Tandingan, Colorado Springs, CO (US);
Judith Allen, Monument, CO (US);
David Still, Colorado Springs, CO (US);
Jayant Ashokkumar, Colorado Springs, CO (US);
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Abstract
Multi-bit non-volatile random access memory cells are disclosed. A multi-bit non-volatile random access memory cell may include a volatile storage element and a non-volatile storage circuit. The non-volatile storage circuit may include at least one first pass transistor connected to a data true (DT) node of the volatile storage element and at least one second pass transistor connected to a data complement (DC) node of the volatile storage element. The non-volatile storage circuit may also include multiple non-volatile storage elements. Each non-volatile storage element may be configured to be selectively connectable to the DT node of the volatile storage element via the at least one first pass transistor and selectively connectable to the DC node of the volatile storage element via the at least one second pass transistor, allowing the multi-bit non-volatile random access memory cell to store/recall more than one databit per cell.