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For the Inventor, By the Inventor

Algonquin, IL, United States of America

Joseph P Golat

This inventor holds 22 USPTO granted patents and 6 published patent applications, primarily in RF Circuit Design. Top assignees: Psemi Corporation, Freescale Semiconductor,inc., Murata Manufacturing Co., Ltd.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joseph P Golat. Retrieved from https://idiyas.com/inventor/joseph-p-golat

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 90.9

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 89(Granted Patents)


Location History:

  • Evanston, IL (US) (2006)
  • Algonquin, IL (US) (2012)
  • Cary, IL (US) (2011 - 2017)
  • Crystal Lake, IL (US) (2018 - 2024)

Company Filing History:

goldMedal15 out of 705 
 
Psemi Corporation
 patents
silverMedal4 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal2 out of 13,796 
 
Murata Manufacturing Co., Ltd.
 patents
4. 1 out of 223 
 
Peregrine Semiconductor Corporation
 patents

Years Active: 2006-2026

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Areas of Expertise:
Gain Control
RF Switch
LNA Design
Bypass Path
Mixer Circuits
Transformer Coupled
Bias Control
Tuned Amplifier
Voltage Converters
Dropout Regulator
Phase Bypass
High Supply Voltage
22 patents (USPTO):Explore Patents
1. 12519469 - Switch capacitance cancellation circuit (2026-01-06),
2. 12489403 - Cascode gain boosting and linear gain control using gate resistor (2025-12-02),
3. 12166729 - LNA with Tx harmonic filter (2024-12-10),
4. 12052003 - Source switch split LNA design with thin cascodes and high supply voltage (2024-07-30),
5. 12034198 - Tunable Wilkinson splitter (2024-07-09),
6. 12028060 - Switch capacitance cancellation circuit (2024-07-02),
7. 11777498 - High power RF switch with controlled well voltage for improved linearity (2023-10-03),
8. 11777451 - Cascode gain boosting and linear gain control using gate resistor (2023-10-03),
9. 11588447 - Source switch split LNA design with thin cascodes and high supply voltage (2023-02-21),
10. 11489495 - Cascode gain boosting and linear gain control using gate resistor (2022-11-01),
11. 11405064 - Bypass path reuse as feedback path in frontend module (2022-08-02),
12. 11290105 - High power RF switch with controlled well voltage for improved linearity (2022-03-29),
13. 11277109 - Disabled input switch for LNA input attenuation (2022-03-15),
14. 11264984 - Single supply RF switch driver (2022-03-01),
15. 11088668 - LNA with controlled phase bypass (2021-08-10),

Title: The Inventor Joseph P Golat: Pioneering Innovations in Algonquin

Introduction: Joseph P Golat is a distinguished inventor based in Algonquin, Illinois, known for his groundbreaking contributions to various industries.

Latest Patents: Joseph P Golat holds several patents in the fields of technology and engineering, showcasing his continuous commitment to innovation.

Career Highlights: Throughout his career, Joseph P Golat has demonstrated a remarkable ability to transform ideas into tangible inventions that have had a significant impact on the market.

Collaborations: Joseph P Golat has collaborated with leading companies and research institutions, leveraging his expertise to drive forward cutting-edge projects and developments.

Conclusion: Joseph P Golat's passion for innovation and his relentless pursuit of excellence make him a prominent figure in the world of inventors, with a legacy that continues to inspire future generations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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