The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Dec. 21, 2020
Applicant:
Psemi Corporation, San Diego, CA (US);
Inventors:
David Kovac, Arlington Heights, IL (US);
Joseph Golat, Crystal Lake, IL (US);
Assignee:
PSEMI CORPORATION, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/04 (2006.01); H03K 17/687 (2006.01); H03K 17/693 (2006.01);
U.S. Cl.
CPC ...
H03K 17/693 (2013.01); H03K 2217/0018 (2013.01); H03K 2217/0054 (2013.01);
Abstract
RF transistors manufactured using a bulk CMOS process exhibit non-linear drain-body and source-body capacitances which degrade the linearity performance of the RF circuits implementing such transistors. The disclosed methods and devices address this issue and provide solutions based on implementing two or more bias voltages in accordance with the states of the transistors. Various exemplary RF circuits benefiting from the described methods and devices are also presented.