Joseph F Degelormo

Title: Joseph F Degelormo: Innovator in Semiconductor Technology

Introduction

Joseph F Degelormo is a notable inventor based in Cold Spring, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of doping semiconductor materials. His work has implications for the efficiency and effectiveness of semiconductor devices.

Latest Patents

Joseph F Degelormo holds 1 patent for his invention titled "Highly doped semiconductor material and method of fabrication thereof." This patent describes a method for diffusion doping of semiconductor chips and wafers, specifically silicon chips and wafers, at peak concentrations exceeding about 3.times.10.sup.19 atoms/cm.sup.3. The process involves placing the semiconducting material in a furnace with a carrier gas and a dopant-containing gas, allowing for high peak concentrations without damaging the silicon surface.

Career Highlights

Throughout his career, Joseph has worked with International Business Machines Corporation, commonly known as IBM. His role at IBM has allowed him to explore and develop advanced semiconductor technologies that are crucial for modern electronics.

Collaborations

Joseph has collaborated with notable coworkers such as Paul M Fahey and Craig M Ransom. These collaborations have contributed to the advancement of semiconductor research and development.

Conclusion

Joseph F Degelormo's innovative work in semiconductor doping methods showcases his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the development of efficient semiconductor devices.