The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1993
Filed:
Jul. 14, 1992
Joseph F Degelormo, Cold Spring, NY (US);
Paul M Fahey, Pleasantville, NY (US);
Thomas N Jackson, Peekskill, NY (US);
Craig M Ransom, Hopewell Junction, NY (US);
Devendra K Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for diffusion doping of semiconductor chips and wafers, in particular silicon chips and wafers, at peak concentrations of greater than about 3.times.10.sup.19 atoms/cm.sup.3. The semiconducting material to be doped is placed in a furnace wherein the furnace contains an atmosphere of a carrier gas and a dopant containing gas. The doping containing gas is greater than about 0.1 volume percent of the total volume in the furnace chamber. The pressure of the composite gas is greater than about 0.1 Torr. The composite gas has an oxidizing agent concentration of less than about 1 part per million. The method permits the direct doping of a silicon surface to form a shallow n-doped region having a high peak concentration by a diffusion process thereby eliminating damage to the silicon surface from ion implantation which is the commonly used method to achieve these high doping concentrations. Since the method is nondirectional trench sidewalls can be doped at high concentrations.