Josef Schaetz

Title: The Innovations of Josef Schaetz

Introduction

Josef Schaetz is a notable inventor based in Munich, Germany. He has made significant contributions to the field of power semiconductor devices. His innovative work has led to the development of a patented technology that enhances the efficiency and functionality of semiconductor devices.

Latest Patents

Josef Schaetz holds a patent for a power semiconductor device and method. This device includes a semiconductor body that conducts load current between its front and backside. It features a plurality of control cells designed to manage the load current effectively. Each control cell is partially integrated into the semiconductor body at the front side and includes a gate electrode insulated from the semiconductor body by a gate insulation layer. Notably, this gate insulation layer incorporates a first boron nitride layer, which contributes to the device's performance.

Career Highlights

Throughout his career, Josef has been associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to focus on advancing semiconductor technology and contributing to the company's innovative projects.

Collaborations

Josef Schaetz has collaborated with esteemed colleagues such as Dethard Peters and Stephan Pindl. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Josef Schaetz's contributions to the field of power semiconductor devices exemplify his innovative spirit and dedication to advancing technology. His patent and collaborative efforts continue to influence the semiconductor landscape positively.