Infineon Technologies Ag

Josef Schaetz

Hans-Joachim Schulze

Dethard Peters

Stephan Pindl

A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.

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Munich, Georgia

Josef Schaetz